tm july 2011 FDP150N10A_f102 n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDP150N10A_f102 rev. a1 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter FDP150N10A_f102 units v dss drain to source voltage 100 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c) 50 a - continuous (t c = 100 o c) 36 i dm drain current - pulsed (note 1) 200 a e as single pulsed avalanche energy (note 2) 84.6 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 91 w - derate above 25 o c0.61w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 1.6 o c/w r ja thermal resistance, junction to ambient 62.5 FDP150N10A_f102 n-channel powertrench ? mosfet 100v, 50a, 15m features ?r ds(on) = 12.5m ( typ.)@ v gs = 10v, i d = 50a ? fast switching speed ? low gate charge ? high performance trench tech nology for extremely low r ds(on) ? high power and current handling capability ?rohs compliant description this n-channel mosfet is produced using fairchild semiconductor?s advance powert rench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc converters ? synchronous rectification for telecommunication psu ? battery charger ? ac motor drives and uninterruptible power supplies ? off-line ups g s d to-220 g s d
FDP150N10A_f102 n-channel powertrench ? mosfet FDP150N10A_f102 rev. a1 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDP150N10A FDP150N10A_f102 to-220 - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 100 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.08 - v/ o c i dss zero gate voltage drain current v ds = 80v, v gs = 0v - - 1 a v ds = 80v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.0-4.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 50a - 12.5 15.0 m g fs forward transconductance v ds = 10v, i d = 50a (note 4) -40-s c iss input capacitance v ds = 50v, v gs = 0v f = 1mhz - 1080 1440 pf c oss output capacitance - 267 355 pf c rss reverse transfer capacitance - 11 - pf c oss (er) engry related output capacitance v ds = 50v, v gs = 0v - 436 - pf q g(tot) total gate charge at 10v v ds = 50v, v gs = 10v i d = 50a (note 4, 5) - 16.2 21.0 nc q gs gate to source gate charge - 5.3 - nc q gs2 gate charge threshold to plateau - 2.6 - nc q gd gate to drain ?miller? charge - 3.7 - nc esr equivalent series resistance (g-s) drain open, f = 1mhz - 1.3 - t d(on) turn-on delay time v dd = 50v, i d = 50a v gs = 10v, r gen = 4.7 (note 4, 5) -1336ns t r turn-on rise time - 16 42 ns t d(off) turn-off delay time - 21 52 ns t f turn-off fall time - 5 20 ns i s maximum continuous drain to source diode forward current - - 50 a i sm maximum pulsed drain to source diode forward current - - 200 a v sd drain to source diode forward voltage v gs = 0v, i sd = 50a - - 1.3 v t rr reverse recovery time v gs = 0v, v dd = 50v, i sd = 50a di f /dt = 100a/ s (note 4) -50-ns q rr reverse recovery charge - 55 - nc notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 2mh, i as = 9.2a, r g = 25 , starting t j = 25 c 3. i sd 100a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, dual cycle 2% 5. essentially independent of operating temperature typical characteristics
FDP150N10A_f102 n-channel powertrench ? mosfet FDP150N10A_f102 rev. a1 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 7 4 10 100 400 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 6.5v 6.0v 5.5v 5.0v 234567 1 10 100 200 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 50 100 150 200 0 10 20 30 40 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.0 0.5 1.0 1.5 1 10 100 400 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 100 5 10 100 1000 3000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 5 10 15 20 0 2 4 6 8 10 *note: i d = 50a v ds = 20v v ds = 50v v ds = 80v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDP150N10A_f102 n-channel powertrench ? mosfet FDP150N10A_f102 rev. a1 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source voltage figure 12. unclamped inductive s w i t c h i n g c a p a b i l i t y -100 -50 0 50 100 150 200 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 50a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.92 0.96 1.00 1.04 1.08 1.10 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] 0.1 1 10 100 200 0.01 0.1 1 10 100 300 100 s 10ms 10 s 1ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 25 50 75 100 125 150 175 0 10 20 30 40 50 60 v gs = 10v i d , drain current [a] t c , case temperature [ o c ] r jc = 1.6 o c/w 0255075100 0.0 0.3 0.6 0.9 1.2 1.5 e oss , [ j ] v ds , drain to source voltage [ v ] 0.01 0.1 1 10 100 1000 1 10 20 if r = 0 t av = (l) ( i as ) / ( 1.3*rated bv dss -v dd ) if r = 0 t av = (l/r)in [( i as *r ) / ( 1.3*rated bv dss -v dd ) +1 ] starting t j = 25 o c starting t j = 150 o c i as , avalanche current [ a ] t av , time in avalanche [ms]
FDP150N10A_f102 n-channel powertrench ? mosfet FDP150N10A_f102 rev. a1 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 13 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.01 0.1 1 2 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 1.6 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDP150N10A_f102 n-channel powertrench ? mosfet FDP150N10A_f102 rev. a1 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDP150N10A_f102 n-channel powertrench ? mosfet FDP150N10A_f102 rev. a1 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDP150N10A_f102 n-channel powertrench ? mosfet FDP150N10A_f102 rev. a1 www.fairchildsemi.com 8 package dimensions to-220
FDP150N10A_f102 n-ch annel powertrench ? mosfet FDP150N10A_f102 rev. a1 www.fairchildsemi.com 9 trademarks the following includes registered and unregistered trademarks an d service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support de vices or systems without the express written ap proval of fairchild se miconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the b ody or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? auto-spm? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optihit? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? the right technology for your success? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product developmen t. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; s upplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification n eeded full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-c ounterfeiting policy. fairchild?s anti-count erfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadve rtently purchase counterfe it parts experience many problems such as lo ss of brand reputation, substandard performance, failed application, and increased cost of pr oduction and manufacturing delays. fairchil d is taking strong measures to protect o urselves and our customers from the proliferation of count erfeit parts. fairchild strongly encourages custom ers to purchase fairchild parts either directl y from fairchild or from authorized fairchild distributors who are listed by country on our web page ci ted above. products cu stomers buy either from fairchild dire ctly or from authorized fairchild distributors are genuine parts, have full traceability, meet fa irchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or ot her assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i55
|
